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| VN0808 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 80V RDS(ON) (max) 4.0 ID(ON) (min) 1.5A Order Number / Package TO-92 VN0808L Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. BVDSS BVDGS 30V -55C to +150C 300C SGD TO-92 1 VN0808 Thermal Characteristics Package TO-92 * ID (continuous)* 0.3A ID (pulsed) 1.9A Power Dissipation @ TC = 25C 1W jc ja IDR* 0.3A IDRM 1.9A C/W 125 C/W 170 ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Min 80 0.8 2.0 100 10 500 ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop 0.85 170 50 40 10 10 10 ns V VDD = 25V, ID = 1A RGEN = 25 ISD = 0.35A, VGS = 0V pF VGS = 0V, VDS = 25V f = 1 MHz 1.5 4.0 A m Typ Max Unit V V nA A Conditions ID = 10A, VGS = 0V VGS = VDS, ID = 1mA VGS = 15V, VDS = 0V VGS = 0V, VDS = 80V VGS = 0V, VDS = 0.8 x Max Rating TA = 125C VGS = 10V, VDS = 10V VGS = 10V, ID = 1A VDS = 10V, ID = 0.5A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RL OUTPUT D.U.T. 11/12/01 |
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